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General semiconductor failure analysis

FA Tools and IC Security

C. Boit and P. Scholz

Electronic Device Failure Analysis, 2,49. 2016

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Micro-contacting of single and periodically arrayed columnar silicon structures by focused ion beam techniques

F. Friedrich and N. Herfurth and A. Teodoreanu and T. Sontheimer and V. Preidel and B. Rech and C. Boit

Applied Physics Letters 2014

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Investigation of multiwalled carbon nanotube interconnection geometry and electrical characteristics of an CNT-filled aluminum microgap

R. Di Giacomo and R. Adami and V. Speranza and C. Barone and S. Pagano and P. Sabatino and G. Carapella and H. Wegner and C. Boit and A. De Girolamo Del Mauro and H. Neitzert

Canadian Journal of Physics, 827-831. 2014

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Focused ion beam contact to nonvolatile memory cells

C. Helfmeier and R. Schlangen and C. Boit

Microelectronics Reliability, 1798-1801. 2014

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Bio-Nano-Composite Materials Constructed With Single Cells and Carbon Nanotubes: Mechanical, Electrical, and Optical Properties

R. Di Giacomo and B. Maresca and M. Angelillo and G. Landi and A. Leone and M. Vaccaro and C. Boit and A. Porta and H. Neitzert

IEEE Transactions on Nanotechnology, 1026-1030. 2013

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Growth process of microcrystalline silicon studies by combines photoluminescence and Raman investigations

A. Klossek and D. Mankovics and T. Arguirov and M. Ratzke and S. Kirner and F. Friedrich and O. Gabriel and B. Stannowski and R. Schlatmann and M. Kittler

Journal of Applied Physics, 223511-1-223511-6. 2013

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Conduction and material transport phenomena of degradation in electrically stressed ultra low-k dielectric before breakdown

T. Breuer and U. Kerst and C. Boit and E. Langer and H. Ruelke and A. Fissel

Journal of Applied Physics, 124103-1-10. 2012

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Monitoring of the formation of a photosensitive device by electric breakdown of an impurity containing oxide in a MOS capacitor

R. Di Giacomo and G. Landi and C. Boit and H. Neitzert

SPIE Proceedings - Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V 2012

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Managing the Unpredictable - A Busines Model for Failure Analysis Service

C. Boit and K. Scholtens and R. Weiland and S. Görlich and D. Schlenker

Microelectronics Failure Analysis - Desk Reference Sixth Edition. ASM International, 627-634. 2011

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Interaction induced transistion in the nanoporous TiO2/Pd-porphyrin system

P. Zabel and M. Funes and T. Dittrich and E. Durantini and L. Otero

Phys. Status Solidi C 7, 280-283. 2010

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Ultra-Low-k Porous SiCOH Dielectric Degradation Process before Breakdown

T. Breuer and U. Kerst and C. Boit and E. Langer and H. Ruelke

Proceedings of the 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010). IEEE Press, 91-96. 2010

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Ultra-Low-k Dielectric Degradation before Breakdown

T. Breuer and U. Kerst and C. Boit and E. Langer and H. Ruelke

Proceedings of the 48th International Reliability Physics Symposium (IRPS 2010). IEEE Society, 890-894. 2010

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Pairing Reactions between Substitutional and Interstitial Defects Caused by the Same Transition Metal in Silicon Float Zone Crystals

H. Lemke and K. Irmscher

Proceedings of the international symposium on High Purity Silicon VIII, 146-159. 2004

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Managing the Unpredictable-A Business Model for Failure Analysis Service

C. Boit and K. Scholtens and R. Weiland and S. Görlich and D. Schlenker

Microelectronics Failure Analysis - Desk Reference Fifth Edition. ASM International, 722-729. 2004

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Design, Metrics, and control of the Unpredictable : A Business Model for Failure Analysis Service (Part 1)

C. Boit and K. Scholtens and R. Weiland and S. Görlich and C. Brillert and C. Burner and P. Egger and D. Schlenker

Electronic Device Failure Analysis, 15-21. 2003

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Design, Metrics, and control of the Unpredictable : A Business Model for Failure Analysis Service (Part 2)

C. Boit and K. Scholtens and R. Weiland and S. Görlich and C. Brillert and C. Burner and P. Egger and D. Schlenker

Electronic Device Failure Analysis, 17-22. 2003

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Prof. Dr. Christian Boit
E 103
Tel +4930 314-25520

Address

Technische Universität Berlin
Department of Semiconductor Devices
E4
Einsteinufer 19
10587 Berlin