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High electron mobility transistors

Single image spectral electroluminescence (photon emission) of GaN HEMTs

P. Scholz and A. Glowacki and U. Kerst and C. Boit and P. Ivo and R. Lossy and H. Würfl and Y. Yokoyama

Proceedings of the 51st International Reliability Physics Symposium (IRPS 2013). IEEE Press, CD.3.1-CD.3.7. 2013

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Comparative study of alGaN/GaN HEMTS robustness versus buffer design variations by applying Electroluminescence and electrical measurements

P. Ivo and A. Glowacki and E. Bahat-Treidel and R. Lossy and J. Würfl and C. Boit and G. Tränkle

Microelectronics Reliability, 217-223. 2011

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Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTS with photon emission spectral signatures

A. Glowacki and P. Laskowski and C. Boit and P. Ivo and E. Bahat-Treidel and R. Pazirandeh and R. Lossy and J. Würfl and G. Tränkle

Microelectronics Reliability, 1211-1215. 2009

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Influence of GaN cap on robustness of AlGaN/GaN HEMTs

P. Ivo and A. Glowacki and E. Bahat-Treidel and R. Pazirandeh and R. Lossy and J. Würfl and G. Tränkle and C. Boit

Proceedings of the 47th International Reliability Physics Symposium (IRPS 2009). IEEE Press, 71-75. 2009

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Photon Emission Spectral Signatures of AIGaN/GaN HEMT for Functional and Reliability Analysis

A. Glowacki and C. Boit and R. Lossy and J. Würfl

Proceedings of the 34th International Symposium for Testing and Failure Analysis (ISTFA 2008). ASM International, 220. 2008

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Prof. Dr. Christian Boit
E 103
Tel +4930 314-25520

Address

Technische Universität Berlin
Department of Semiconductor Devices
E4
Einsteinufer 19
10587 Berlin